JPH0234385B2 - - Google Patents

Info

Publication number
JPH0234385B2
JPH0234385B2 JP59119092A JP11909284A JPH0234385B2 JP H0234385 B2 JPH0234385 B2 JP H0234385B2 JP 59119092 A JP59119092 A JP 59119092A JP 11909284 A JP11909284 A JP 11909284A JP H0234385 B2 JPH0234385 B2 JP H0234385B2
Authority
JP
Japan
Prior art keywords
layer
light
receiving member
atoms
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59119092A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60263160A (ja
Inventor
Keishi Saito
Tetsuo Sueda
Kyosuke Ogawa
Teruo Misumi
Yoshio Tsuezuki
Masahiro Kanai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59119092A priority Critical patent/JPS60263160A/ja
Priority to AU43284/85A priority patent/AU589126C/en
Priority to EP85304011A priority patent/EP0165743B1/en
Priority to CA000483204A priority patent/CA1258394A/en
Priority to DE8585304011T priority patent/DE3580939D1/de
Priority to US06/740,714 priority patent/US4705734A/en
Publication of JPS60263160A publication Critical patent/JPS60263160A/ja
Publication of JPH0234385B2 publication Critical patent/JPH0234385B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G03G5/08228—Silicon-based comprising one or two silicon based layers at least one with varying composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
JP59119092A 1984-06-05 1984-06-12 電子写真用光受容部材 Granted JPS60263160A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP59119092A JPS60263160A (ja) 1984-06-12 1984-06-12 電子写真用光受容部材
AU43284/85A AU589126C (en) 1984-06-05 1985-06-04 Light-receiving member
EP85304011A EP0165743B1 (en) 1984-06-05 1985-06-05 Light-receiving member
CA000483204A CA1258394A (en) 1984-06-05 1985-06-05 Light-receiving member
DE8585304011T DE3580939D1 (de) 1984-06-05 1985-06-05 Lichtempfangselement.
US06/740,714 US4705734A (en) 1984-06-05 1985-06-30 Member having substrate with irregular surface and light receiving layer of amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59119092A JPS60263160A (ja) 1984-06-12 1984-06-12 電子写真用光受容部材

Publications (2)

Publication Number Publication Date
JPS60263160A JPS60263160A (ja) 1985-12-26
JPH0234385B2 true JPH0234385B2 (en]) 1990-08-02

Family

ID=14752697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59119092A Granted JPS60263160A (ja) 1984-06-05 1984-06-12 電子写真用光受容部材

Country Status (1)

Country Link
JP (1) JPS60263160A (en])

Also Published As

Publication number Publication date
JPS60263160A (ja) 1985-12-26

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